ls4150 www.vishay.com vishay semiconductors rev. 1.9, 14-feb-12 1 document number: 85562 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal fast switching diode mechanical data case: quadromelf sod-80 weight: approx. 34 mg cathode band color: black packaging codes/options: gs18/10k per 13 reel (8 mm tape), 10k/box gs08/2.5k per 7 reel (8 mm tape), 12.5k/box features ? silicon epitaxial planar diode ? low forward voltage drop ? high forward current capability ? quadromelf package ? aec-q101 qualified ? compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec applications ? high speed switch and general purpose ? use in computer and industrial applications parts table part ordering code type marking remarks ls4150 ls4150gs18 or ls4150gs08 - tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit repetitive peak reverse voltage v rrm 50 v reverse voltage v r 50 v peak forward surge current t p = 1 s i fsm 4a forward continuous current i f 600 ma average forward current v r = 0 i fav 300 ma power dissipation p tot 500 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 300 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
ls4150 www.vishay.com vishay semiconductors rev. 1.9, 14-feb-12 2 document number: 85562 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse current vs. junction temperature fig. 2 - forward current vs. forward voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 1 ma v f 540 620 mv i f = 10 ma v f 660 740 mv i f = 50 ma v f 760 860 mv i f = 100 ma v f 820 920 mv i f = 200 ma v f 870 1000 mv reverse current v r = 50 v i r 100 na v r = 50 v, t j = 150 c i r 100 a diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 2.5 pf reverse recovery time i f = i r = 10 to 100 ma, i r = 0.1 x i r , r l = 100 ? t rr 4ns 0 40 80 120 160 200 0.01 0.1 1 10 100 i - re v erse c u rrent (a) r t j - j u nction temperat u re (c) 94 9100 scattering limit v r = 50 v 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 9162 scattering limit t j = 25 c
ls4150 www.vishay.com vishay semiconductors rev. 1.9, 14-feb-12 3 document number: 85562 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): quadromelf sod-80 96 12071 cathode identification 1.25 (0.049) min. 3.7 (0.146) 3.3 (0.130) 0.47 (0.019) max. 2.5 (0.098) max. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. foot print recommendation: 2 (0.079) min. > r3 (r0.118) glass 1.7 (0.067) glass the gap bet w een pl u g and glass can be either on cathode or anode side
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